LED Manufacturing Track

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Sponsored by:

Wednesday, February 13

Session 1 - Plenary Session

1:30pm-2:00pm        
Keynote Address #1:  Success Factors in the Ever Competitive LED Market

Roland Mueller
Managing Director
OSRAM Opto Semiconductors (Malaysia) Sdn. Bhd.

Abstract
The LED world is facing the biggest challenge in decades. Significant overcapacities, slow market growth and aggressive new players i.e. manufacturers, make the business outlook much less bright than some years ago. For an LED manufacturer, what makes the difference? What are the key success factors in the ever competitive LED environment? The presentation will address several focus areas:

·       Competitive advantage based on the latest LED technology and innovation

·       Manufacturing capability and quality as the basis for a strong and reliable customer relationships

·       High performance teams

The combination of these three focus areas is the basis of achieving success in the LED market.

Bio
Dr. Roland Mueller became Managing Director for OSRAM Opto Semiconductors (Malaysia) Sdn. Bhd. in February 2012. He is responsible for the site in Penang where OSRAM develops and manufactures LEDs and lasers. It comprises chip production, assembly/test, supply chain management, quality management, procurement, subcontract management and R&D. He started his professional career as a Project Head at Siemens Semiconductors in 1995. He has 17 years experience working with Siemens/OSRAM holding various positions in project teams, development, marketing and planning, market research and marketing communications in the semiconductor business. He was Vice President & General Manager of the OSRAM wafer fab in Penang responsible for the overall ramp and operations since 2007.

2:00pm-2:30pm       
Keynote Address #2:  LED Manufacturing: The Race to Cost Reduction and Profitability

Tom Morrow
Executive Vice President
Emerging Markets, SEMI

Abstract      
Following the boom in LED demand driven by TV backlighting and the strong emergence of solid state  lighting, since 2010 worldwide LED manufacturing capacity has more than doubled to over two million 4” wafer equivalents in 2012, with another 25% increase in capacity expected in 2013.  As average LED selling prices have declined by approximately 50%, LED manufacturers are investing in economies of scale and alternative materials and productivity, throughput and yield improvements to achieve lower costs and profitable returns. Yield is by far the most important driver of costs, with best industry net yields still at some 75%-80%, and the majority around 50%. This presentation will provide   an overview of LED capacity trends and capital investments worldwide, including trends in substrate size and type, automation strategies, and manufacturing standards.  An update on the status and trends in LED manufacturing in China will also be presented.

Bio
Thomas Morrow is Executive Vice President of SEMI, the global association for micro and nano-electronics manufacturing, responsible for emerging markets and technologies, including global LED programs.  SEMI currently organizes LED manufacturing forums in China, Korea, Taiwan, US, Japan, and Singapore and serves the LED industry through manufacturing standards development, market data and statistics, public policy advocacy, and other areas.  Prior to SEMI, Tom was Senior Vice President of e21, a technology market consultancy with offices throughout Asia. Earlier Tom held executive positions with Motorola and Omron Electronics.

2:30pm-3:00pm        
Enabling Solid State Lighting through Advancements in MOCVD Technology

Mark McKee
Director Product  Marketing
Veeco Instruments

Abstract
Epitaxial growth using MOCVD (metal-organic chemical vapor deposition) is the most critical and expensive manufacturing step for HB LED fabrication.  Over 50% of the capital cost for LED manufacturing is for MOCVD equipment. LED manufacturers have made tremendous progress in LED performance and cost reduction with the recent large-scale application of HB LEDs for LED TV back- lighting units.  However, further improvements are needed to enable widespread adoption of HB LEDs in outdoor, commercial, industrial and residential lighting. This has led to new challenges for MOCVD equipment suppliers in improving productivity, yield, reliability and factory integration. This presentation will highlight how MOCVD technology advances are expected to reduce LED manufacturing costs over the next few years to enable widespread adoption of solid state lighting.

Bio
Mark McKee is currently Director, Product Marketing for Veeco’s MOCVD business and is responsible for the GaN product line.  Prior to this role, he held key positions in product marketing and project management.  Prior to joining Veeco, he was employed by Emcore Corporation, a leader in MOCVD equipment manufacturing where held positions as Staff Scientist and Director of North American Sales.  He is a 20+ year veteran of MOCVD with extensive background experience in semiconductor technology.   Mark McKee received his MS degree in Materials Science from Rutgers University, NJ.  He has authored and co-authored over 25 technical publications.

Session 2 - Wafer Level Manufacturing Issues

3:30pm-4:00pm             
Technology and Economic Considerations for High Volume HB LED Lithography Manufacturing

Andrew Hawryluk
Senior Vice President and CTO
Ultratech

Abstract
Manufacturing cost reductions are critical to ensure wide spread adoption of solid-state lighting.  Lithography is one of the key process steps affecting the final device yield and performance. Currently there are four to six lithography steps in a conventional LED manufacturing process and more may be added to increase the LED extraction efficiency.  As the HB LED design rules are tightened to improve light extraction efficiency, there is an increasing trend towards the use of projection lithography, which improves overlay, enables printing much smaller minimum feature sizes without introducing defects, and provides superior resist profiles for improved linewidth control. The effect of these process improvements is higher device yield, which directly impacts device cost resulting in accelerated adoption of this technology. This presentation will discuss the key technical and economic advantages associated with the use of 1X stepper technology to meet the cost effective, high volume production requirement for HB LED devices.

Bio
In 1983, Dr. Andrew Hawryluk joined the Lawrence Livermore National Laboratory (LLNL) where he developed EUV optical components, sources and systems. He  joined Ultratech in 1996 where he ran the Engineering Department. In 2008 was promoted to Senior Vice President and Chief Technology Officer. He is also the Chairman of the Ultratech Technical Advisory Board. Dr. Hawryluk is the President of The Lithography Workshop and holds more than 50 patents worldwide. He has over 50 publications in refereed journals, and has received 7 R&D-100 awards, the DOE Award of Excellence and the 2009 SEMI award for North America.

4:00pm-4:30pm              
High Throughput for Resist Coated GaN Etching

Stephanie Baclet
Applications Engineer
Oxford Instruments

Abstract
High throughput in GaN-based LED production is determined principally by batch size, process time and downtime of the tool in operation. As the batch size and length of time of the etching process is often fixed in order to meet selectivity, uniformity and profile specifications, the areas where throughput can be significantly improved is by reducing the length of the cleaning cycle at the end of the etch process and the amount of downtime for the tool. To increase the number of batches that can be processed between each mechanical clean, a plasma clean process is often performed after each etch cycle. In doing so, the overall time for each batch to be processed is increased, which leads to a reduction in throughput. Improvements in the plasma cleaning can remove material sputtered onto chamber walls at five times the rate compared with previous standard plasma clean processes. The effects of this are two-fold: 1.) the length of cleaning time after each etching cycle can be dramatically reduced, and 2.) the number of batches processed between each mechanical clean is increased. Both of these factors contribute to significant gains in the overall throughput of batch processing GaN wafers, driving down the cost per lumen of the finished device.

Bio
Stephanie Baclet studied in Orleans, France where she completed her engineering degree in plasma physics, optics and laser technology in 2009.  Since being hired at Oxford Instruments, she has been developing plasma etching systems for HBLED applications. Tackling hardware and process limitations, she works on improving existing systems as well as introducing new systems to the HBLED market. 

4:30pm-5:00pm              
Commercialization of High Performance LEDs based on GaN-on-Si Technology
  
Hanmin Zhao
Chief Technical Officer
Lattice Power

Abstract
High performance LEDs based on GaN-on-silicon technology has attracted a lot of attention lately because of the potential of significant cost reduction. Afler many years of development work, Lattice Power has successfully developed a manufacturing process that mass produces high power lighting class LEDs with performance and yield similar to LEDs made from sapphire based technology. Extensive life-test and field test data has showed that these LEDs are as reliable as sapphire based LEDs.

Bio
Dr. Hanmin Zhao has been the CTO of Lattice Power Inc. since 2009, where he is leading a team of engineers developing an exciting new technology in making high power LEDs for solid state lighting applications. Prior to Lattice Power, he worked in the Advanced Lab at the Philips Lumileds Lighting company for four years where he participated in developing world record 150 lm/W high-power lighting class LEDs in 2008. Before Lumileds, he worked for JDSU for 10 years where he developed many of its market leading lasers and transmitters for fiber optic telecommunications.

Thursday,  February 14

Session 3: Metrology and Yield Management

8:30am-9:00am        
Process Control Methods for Accelerating  LED Manufacturing Yield, Agility
and Profitability

John Robinson
Director of Marketing, PCID Division
KLA-Tencor Corp.

Abstract
The next LED investment cycle will be driven by solid-state lighting (SSL) applications.  In order to enable large scale adoption of LEDs in general lighting, the cost per lumen must be reduced further.  Significant reduction of this critical metric, while still maintaining profitability, requires manufacturing efficiency improvements including higher fab yields, faster R&D, and faster production ramps.  Current LED fab yields are significantly lower than those of the silicon integrated circuit (IC) industry.  LED yield loses can be traced to all modules of the manufacturing cycle including incoming substrates, epitaxial (epi) growth processes, wafer patterning, post dice processing, and packaging. This study examines current LED manufacturing yield issues, and how LED manufacturers are addressing these challenges through defect analysis and advanced process control. 

Bio
John Robinson, Ph.D. is director of marketing in the PCID Division at KLA-Tencor Corporation and is responsible for LED and compound semiconductor analysis solutions.  He has also held positions in applications development, advanced development, and program management.  Prior to joining KLA-Tencor John was a Senior Process Engineer in Motorola’s Advanced Products Research and Development Lab.  He has authored over 50 technical publications and patents.

9:00am-9:30am        
Fleet Management via Process Control Software

Matthew Chriss
Process Control Engineer, LED
Rudolph Technologies

Abstract
Fleet management via process control software is essential to increasing equipment uptime, improving yield, and reducing production costs.  Fault Detection and Classification assess tool health and process robustness by tracking tool alarms and equipment stability.  Process signal data may be used to generate SPC and trend charts.   Run-to-run process automation eliminates manual operator/engineer controlled recipe tuning, and standardizes and improves tuning reliability and accuracy. Yield management systems provide automated reports for data analysis to identify causes of yield loss.  Variability and multivariate analysis provide chamber matching capabilities.  Correlation, step-contribution analysis, and automated signature analysis allow process engineers to precisely identify yield losses.

Bio
Matthew Chriss joined Rudolph Technologies in 2011 as Process Control Specialist, LED, applying his MOCVD and HVPE crystal growth and LED chip fabrication experience.  From 2009 – 2011, as an Infrared Characterization & Process Engineer at EPIR Technologies, he developed advanced device fabrication techniques for next-generation infrared focal plane arrays.  Prior to joining EPIR, he was an Epitaxial Process Development Engineer at Diodes Fabtech.  Formerly, he was a Process Development Engineer at CREE and ATMI.

9:30am-10:00am      
Current Advantages and Future Potential of In-Situ Monitoring During Epitaxy in Today’s LED Production
 
Kolja Haberland
CTO
LayTec AG

Abstract
This presentation reviews the current status of in-situ monitoring in LED production, explains the techniques that are widely used, and highlights the benefits for the LED producer and the potential for yield improvement. A typical example is real-time control of the GaN-layer temperature during multi-quantum-well growth to minimize wafer-to-wafer and run-to-run variations. The future potential of in-situ monitoring by more efficient use of the obtained data, such as FDC and APC integration, and simplified operator views with “traffic light“ functionality will be shown using selected examples from LED-growth on sapphire and Si substrates.

Bio
Dr. Kolja Haberland is Chief Technology Officer at LayTec, a leading manufacturer of integrated metrology for the compound semiconductor industry. He studied physics at the Technical University of Berlin, in 2003 he obtained a PhD for his work on optical in-situ monitoring during epitaxial growth.  Since 1999 he has worked in several upper management positions at LayTec.

Session 4 -  Substrate Technology, Manufacturing and Standards

10:30am-11:00am
Industrialize GaN LEDs with GaN-on-Si wafer technology

Alexander Loesing
Co-founder and CFO
AZZURRO Semiconductors

Abstract
Almost exactly 20 years after the breakthroughs which led to the unimaginably wide adoption of G aN-based LEDs today, a new breakthrough is looming. Having moved from small wafer pieces in the early days to 2-inch wafer size, the market is still dominated by 2-inch G aN-on-sapphire based LEDs, representing close to 50 % of all LED wafer area processed. Larger sapphire wafer diameters not only face price but also yield challenges. MOVPE-reactor technology overall, and multi-wafer reactors in particular, as well as advances in processing capabilities, have tremendously improved yield and production costs. At the same time the scope to increase yields further and lower the cost of production remain key challenges for the demanded cost reductions by the LED market. The breakthrough opportunities for further advancing the industrialization of GaN-based LEDs by using large G aN-on-Si wafer technology are discussed in this presentation.

Bio
Alexander co-founded AZZURRO Semiconductors in 2003 and is CFO as well as heading AZZURRO’s business development activities. With an entrepreneurial and venture capital background he led expansion and business development projects throughout his career during which he successfully raised double-digit million Euro funding.

11:00am-11:30am    
Wafer Manufacturing Maturity

Salman Kassir
Senior Process Engineer
Strasbaugh

Abstract
Sapphire wafer planarization and surface preparation for LED fabrication is and will continue to follow the same path as silicon wafers for semiconductors in the following sense: there will be a transition from 2-inch wafers to 200 mm and beyond; and there will be a transition from loose abrasive manually loaded batch processing to fixed abrasive automatic loading single wafer processing.  The benefits of the transition will be:

·       Ten fold improvement in wafer thickness variation resulting in improved yields

·       Every wafer finished to the same dimensions

·       No sorting necessary for subsequent operations

·       Reduced cost per wafer

·       Same manufacturing cost in the US, Asia or Europe. 

As the sapphire wafer supplier base matures, many fabs will consolidate or fail.  It is believed that within five years the number of fabs making leading edge wafers will drop from seventy to less than ten.  The remaining wafer fabs will employ single wafer automated surfacing equipment.  Those fabs will operate equally in the US, Asia, Japan and Europe.

Bio
Salman Kassir first joined Strasbaugh in1994.  He worked there for 10 years grinding and polishing semiconductor and compound semiconductor materials.  He moved to Dow Corning in 2004, where he was responsible for silicon carbide planarization starting with wire sawed substrates all the way to final CMP.  In 2008 he returned to Strasbaugh as a senior process engineer.

11:30am - 12:00pm
SEMI Standards Activities  for Enhanced Manufacturability of HB LEDs

David Joyce
Co-Chair of the SEMI Standards on Sapphire 
G T Advanced Technology

Abstract
Reaching the full potential of HB- LEDs requires the global LED manufacturing supply chain to collaborate on technology roadmaps and industry standards to reduce costs and spur innovation.  To that end, key industry stakeholders created the SEMI HB-LED Standards Committee in late 2010.  The work of this committee culminated in the publication of SEMI HB1, a standard for 150 mm Sapphire substrate wafers, based on input from representatives throughout the LED supply chain from North America, Europe, and Asia.

The HB-LED Wafer Task Force is currently developing further refinements to the HB1 standard.  Continued development of this standard will be key to the ongoing trend of cost down and quality improvements necessary for the sustained development of the HB-LED industry.

Bio
David Joyce has over 13 years experience in sapphire crystal growth and fabrication, as well as in PV silicon crystal growth, and PV materials processing.  David is co-chair, with Julie Chao of Silian Sapphire Corporation, of the Wafer Task Force for the SEMI North America HB-LED Committee.  The work of this committee has culminated in the publication of HB-1, the new SEMI standard for 150 mm sapphire substrate wafers.